FLM1414-4F
Internally Matched Power GaAs FET FEATURES
High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DESCRIPTION
The FLM1414-4F is a power GaAs FET that is internally matched ...