FLM1011-20F

FLM1011-20F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=43.0dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 10.7～11.7GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM1011-20F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 93.7 -65 to +175 175 Unit V V W o C C o RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25°C) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=25Ω RG=25Ω Condition Limit Unit V mA mA ≤10 ≤64 ≥-11.2 Limit Typ. 10.8 10 -1.5 43 7.0 6.0 27 -45.0 1.4 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=6480mA VDS=5V, IDS=600mA IGS=-600µA VDS=10V f=10.7 - 11.7 GHz IDS=0.60IDSS(typ) Zs=ZL=50Ω Min. -0.5 -5.0 42 6.0 - Max. 16.2 -3.0 7.2 1.2 1.6 Unit A S V V dBm dB A % dB dBc o Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise f= 1...