FLM0910-12F

FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PTot Tstg Tch Rating 15 -5 57.6 -65 to +175 175 Unit V V W oC oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C) Item DC Input Voltage Gate Current Gate Current Symbol VDS IGS IGR RG=50Ω RG=50Ω Condition Limit Unit V mA mA ≤10 ≤32.0 ≥-5.6 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=3.6A VDS=5V, IDS=300mA IGS=-340uA VDS=10V f=9.5 - 10.5 GHz IDS=0.5Idss (typ.) Zs=ZL=50Ω Min. -0.5 -5.0 39.5 6.0 - Limit Typ. 6.0 5000 -1.5 40.5 7.0 3.5 25 2.3 - Max. 9.0 -3.0 4.5 1.2 2.6 80 Unit A mS V V dBm dB A % dB o Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise ηadd ∆G Rth ∆Tch Channel to Case 10V X Idsr X Rth - C/W o C CASE STY...