ELM7785-60F
FEATURES High Output Power: P1dB=48.0dBm(Typ.) High Gain: G1dB=8.0dB(Typ.) High PAE: ηadd=37%(Typ.) Broad Band: 7.7 to 8.5GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The ELM7785-60F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm ...
