ELM7785-10F
C-band Internally Matched FET
FEATURES ・High Output Power ： P1dB=40.5dBm(typ.) ・High Gain ： G1dB=8.5dB(typ.) ・High P.A.E. ： ηadd=37%(typ.) ・Broad Band ： 7.7 - 8.5GHｚ ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The ELM7785-10F is a power GaAs FET that is internally matched for standard communication bands to provide ...
