FLM5964-8F

FLM5964-8F C-Band Internally Matched FET FEATURES High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 5.9 to 6.4GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The FLM5964-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.C Storage Temperature Tstg Channel Temperature Tch SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (V DS ) should not exceed 10 volts. 2. The forw ard and reverse gate currents should not exceed 32.0 and -4.4 mA respectively w ith gate resistance of 100ohm. Rating 15 -5 42.8 -65 to +175 175 Unit V V W deg.C deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE ESD Note : Based on JEDEC　JESD22-A114 (C=100pF, R=1....