FLM5964-18F
FEATURES
High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM5964-18F is a power GaAs FET that is internally matched f...