ELM7785-7PS

ELM7785-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm (Typ.) High Gain: G1dB=9.5dB (Typ.) High PAE: ηadd=33% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-7PS is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg-C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT TSTG TCH Rating 15 -5 42.8 -40 to +125 175 Unit V V W deg-C deg-C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg-C) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR TCH RG=100 ohm RG=100 ohm Condition Limit <10 <+16 >-2.2 155 Unit V mA mA deg-C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg-C) Item Drain Current Trans conductance Pinch-off Voltage Gage-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power Added Efficiency Gain Flatness 3rd Order Inter Modulation Distortion Rth ∆Tch Symbol IDSS gm VP VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f=8.5GHz ∆f=10MHz, 2-tone Test Pout=28.0dBm (S.C.L) Channel to Case 10V x Idsr x Rth VDS=10V IDS(DC)=2200mA(typ.) f=7.7~8.5 GHz Condition VDS=5V, VGS=0V VDS=5V, IDS=2200mA VDS=5V, IDS=170mA IGS=170uA Limit Min. -0.5 -5.0 38.0 8.0 -40 Typ. 3400 3400 -1.5 39.0 9.5 2200 33 -43 2.5 Max...