ELM5964-4PS

ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=37% (Typ.) Frequency Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VGS PT TSTG TCH Rating 15 -5 27.3 -40 to +125 175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg.C) Item Symbol Condition DC Input Voltage VDS Forward Gate Current Reverse Gate Current Channel Temperature IGF IGR TCH RG=100 ohm RG=100 ohm Limit <10 <+16 >-2.2 155 Unit V mA mA deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power Added Efficiency Gain Flatness 3rd Order Inter Modulation Distortion Rth DTch Symbol IDSS gm VP VGSO P1dB G1dB Idsr hadd DG IM3 Rth DTch VDS=10V Ids(DC)=0.65IDSS(typ.) f=5.9 to 6.4 GHz f=6.4GHz Df=10MHz, 2-tone Test Pout=25.5dBm (S.C.L.) Channel to Case 10V x Idsr x Rth Condition VDS=5V, V GS=0V VDS=5V, IDS=1100mA VDS=5V, IDS=85mA IGS=85uA Min. -0.5 -5.0 35.0 10.0 -40 Limit Typ. 1700 1700 -1.5 36.0 11.5 11...