Document
10V Drive Nch MOSFET
R5007ANJ
zStructure Silicon N-channel MOSFET zDimensions (Unit : mm)
LPTS
10.1 4.5 1.3
zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy.
13.1 9.0
3.0
1.0
1.24
0.78
(3)
5.08
2.7
(1) Base (Gate) (2) Collector (Drain) (3) Emitter (Source)
(1)
(2)
Each lead has same dimensions
zApplications Switching
zInner circuit
∗1
zPackaging specifications
Package Code Type Basic ordering unit (pieces) Taping TL 1000
(1)
(1) Gate (2) Drain (3) Source
(2)
(3) ∗1 Body Diode
R5007ANJ
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed
Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg
∗3 ∗1 ∗3 ∗1 ∗2 ∗2
Limits 500 ±30 ±7 ±28 7 28 3.5 3.5 40 150 −55 to +150
Unit V V A A A A A mJ W °C °C
zThermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits 3.13 Unit °C/W
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○
1.2
2.54
0.4
1/5
2009.02 - Rev.A
R5007ANJ
zElectrical characteristics (Ta=25°C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
∗ Pulsed
Data Sheet
Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) ∗ | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗
Min. − 500 − 2.5 − 2.5 − − − − − − − − − −
Typ. − − − − 0.8 − 500 300 23 20 22 50 25 13 3.5 5.5
Max. ±100 − 100 4.5 1.05 − − − − − − − − − − −
Unit nA V µA V Ω S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=3.5A, VGS=10V ID=3.5A, VDS=10V VDS=25V VGS=0V f=1MHz ID=3.5A, VDD 250V VGS=10V RL=71.4Ω RG=10Ω VDD 250V ID=7A VGS=10V RL=35.7Ω / RG=10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Forward voltage
∗ Pulsed
Symbol VSD ∗
Min. −
Typ. −
Max. 1.5
Unit V
Conditions IS= 7A, VGS=0V
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○
2/5
2009.02 - Rev.A
R5007ANJ
zElectrical characteristic curves
100 Operation in this area is limited by RDS(ON) PW =100us PW =1ms DRAIN CURRENT: ID (A) 8 6 4 5.0V 2 VGS= 4.5V 0 0.1 1 10 100 1000 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.2 Typical Output Characteristics(Ⅰ ) 0 0 1 2 3 10 7.0V 8.0V 10V Ta= 25°C Pulsed DRAIN CURRENT: ID (A)
Data Sheet
5 4 3 2 1 VGS= 4.5V 4 5 6.0V 5.0V Ta= 25°C Pu.