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R5007ANJ Dataheets PDF



Part Number R5007ANJ
Manufacturers Rohm
Logo Rohm
Description 10V Drive Nch MOSFET
Datasheet R5007ANJ DatasheetR5007ANJ Datasheet (PDF)

10V Drive Nch MOSFET R5007ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 4.5 1.3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 13.1 9.0 3.0 1.0 1.24 0.78 (3) 5.08 2.7 (1) Base (Gate) (2) Collector (Drain) (3) Emitter (Source) (1) (2) Each lead has same dimensions zApplications Switching zInner circuit.

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10V Drive Nch MOSFET R5007ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 4.5 1.3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 13.1 9.0 3.0 1.0 1.24 0.78 (3) 5.08 2.7 (1) Base (Gate) (2) Collector (Drain) (3) Emitter (Source) (1) (2) Each lead has same dimensions zApplications Switching zInner circuit ∗1 zPackaging specifications Package Code Type Basic ordering unit (pieces) Taping TL 1000 (1) (1) Gate (2) Drain (3) Source (2) (3) ∗1 Body Diode R5007ANJ zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg ∗3 ∗1 ∗3 ∗1 ∗2 ∗2 Limits 500 ±30 ±7 ±28 7 28 3.5 3.5 40 150 −55 to +150 Unit V V A A A A A mJ W °C °C zThermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 3.13 Unit °C/W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1.2 2.54 0.4 1/5 2009.02 - Rev.A R5007ANJ zElectrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ Pulsed Data Sheet Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) ∗ | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 500 − 2.5 − 2.5 − − − − − − − − − − Typ. − − − − 0.8 − 500 300 23 20 22 50 25 13 3.5 5.5 Max. ±100 − 100 4.5 1.05 − − − − − − − − − − − Unit nA V µA V Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=3.5A, VGS=10V ID=3.5A, VDS=10V VDS=25V VGS=0V f=1MHz ID=3.5A, VDD 250V VGS=10V RL=71.4Ω RG=10Ω VDD 250V ID=7A VGS=10V RL=35.7Ω / RG=10Ω zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 7A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.02 - Rev.A R5007ANJ zElectrical characteristic curves 100 Operation in this area is limited by RDS(ON) PW =100us PW =1ms DRAIN CURRENT: ID (A) 8 6 4 5.0V 2 VGS= 4.5V 0 0.1 1 10 100 1000 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.2 Typical Output Characteristics(Ⅰ ) 0 0 1 2 3 10 7.0V 8.0V 10V Ta= 25°C Pulsed DRAIN CURRENT: ID (A) Data Sheet 5 4 3 2 1 VGS= 4.5V 4 5 6.0V 5.0V Ta= 25°C Pu.


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