2SJ655

Ordering number : ENN7712 2SJ655 2SJ655 Features P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --12 --48 2.0 25 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=-100V, VGS=0 VGS= ±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-6A ID=--6A, VGS=-10V ID=--6A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz Ratings min --100 --1 ±10 --1.2 9 13 100 136 2090 155 108 136 190 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : J655 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, airc...