900V N-Channel Power MOSFET
TSM9N90
900V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V) R...
Description
TSM9N90
900V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
900 1.4 @ VGS =10V
ID (A)
9
General Description
The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
Features
● ● ● Low RDS(ON) 1.4Ω (Max.) Low gate charge typical @ 65nC (Typ.) Improve dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM9N90CZ C0G
Package
TO-220
Packing
50pcs / Tube
TSM9N90CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation Tc = 25 C Derate above 25℃
o
Symbol
VDS VGS Tc = 25 C Tc = 100 C
o o
TO-220
900 ±30 9 5.7 36 4.5 857 9 29 290 2.32 150
ITO-220
Unit
V V
ID IDM dv/dt EAS IAR EAR PD TJ TSTG
9* 5.7 * 36 *
A A V mJ A mJ
48 0.38 -55 to +150
W ºC/W ºC
o
Operating Junction Temperature Stora...
Similar Datasheet