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TSM3N90

Taiwan Semiconductor
Part Number TSM3N90
Manufacturer Taiwan Semiconductor
Description 900V N-Channel Power MOSFET
Published Jul 10, 2014
Detailed Description TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 9...
Datasheet PDF File TSM3N90 PDF File

TSM3N90
TSM3N90

Overview
TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.
Gate 2.
Drain 3.
Source PRODUCT SUMMARY VDS (V) 900 RDS(on)(Ω) 5.
1 @ VGS =10V ID (A) 1.
25 General Description TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features ● ● ● Low RDS(ON) 4.
3Ω (Typ.
) Low gate charge typical @ 17nC (Typ.
) Low Crss typical @ 8.
7pF (Typ.
) Block Diagram Ordering Information Part No.
TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0 Package TO-251...


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