TSM3N80

TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 800 RDS(on)(Ω) 4.2 @ VGS =10V ID (A) 1.5 General Description TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● ● Low RDS(ON) 3.3Ω (Typ.) Low gate charge typical @ 19nC (Typ.) Low Crss typical @ 10.2pF (Typ.) Improved dv/dt capability Block Diagram Ordering Information Part No. TSM3N80CH C5G TSM3N80CP ROG TSM3N80CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Channel MOSFET TSM3N80CI C0 ITO-220 Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature o Symbol VDS VGS Tc = 25ºC Tc = 100ºC ID IDM EAS IAR EAR dv/dt PTOT TJ TSTG Limit IPAK/DPAK ITO-220 800 ±30 3 1.83 12 48 3 9.4 4.5 94 32 150 -55 to +150 94 TO-220 U...