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TSM1NB60S

Taiwan Semiconductor

600V N-Channel Power MOSFET


Description
TSM1NB60S 600V N-Channel Power MOSFET TO-92 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 10 @ VGS =10V ID (A) 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior ...



Taiwan Semiconductor

TSM1NB60S

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