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TSM1NB60

Taiwan Semiconductor
Part Number TSM1NB60
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Jul 10, 2014
Detailed Description TSM1NB60 600V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRO...
Datasheet PDF File TSM1NB60 PDF File

TSM1NB60
TSM1NB60

Overview
TSM1NB60 600V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) SOT-223 Pin Definition: 1.
Gate 2.
Drain 3.
Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 10 @ VGS =10V ID (A) 0.
5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features ● ● ● Low RDS(ON) 8Ω (Typ.
) Low gate charge typical @ 6.
1nC (Typ.
) Low Crss typical @ 4.
2pF (Typ.
) Block Diagram Ordering Information Part No.
TSM1NB60CH C5G TSM1NB60CP ROG Package TO-251 TO-252 Packing 75...


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