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TSM19N20
200V N-Channel Power MOSFET
Description
TSM19N20 200V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 200 RDS(on)(mΩ) 92 @ VGS =10V ID (A) 18 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 92mΩ (Max.) Low gate charge typical @ 55nC (Typ.) Low Crss typical @ 73pF (Typ.) Block Diagram Ordering Information Part No. TSM19N20CP ROG ...
Taiwan Semiconductor
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