TSM10P06

TSM10P06 60V P-Channel MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) -60 220 @ VGS = -4.5V -2 RDSON (mΩ) 170 @ VGS = -10V ID (A) -5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. Package Packing P-Channel MOSFET TSM10P06CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Energy (Note 2) Avalanche Current Total Power Dissipation @ TC=25C Operating Junction Temperature Operating Junction and Storage Temperature Range a,b Symbol VDS VGS ID IDM IS EAS IAS PDTOT TJ TJ, TSTG Limit -60 ±20 -10 -20 -10 5 -10 37 +150 - 55 to +150 Unit V V A A A mJ A W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨJC RӨJA Limit 4 70 Unit o o C/W C/W 1/4 Version: B13 TSM10P06 60V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Cu...