TSF30U45C

TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.7g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode SYMBOL VRRM IF(AV) IFSM dV/dt VAC Min. Breakdown voltage ( IR =1.0mA ) Maximum instantaneous forward voltage per diode ( Note1 ) IF = 15A TJ = 25°C IF = 15A TJ = 125°C TJ = 25°C TJ = 125°C VBR VF VF IR RθjC TJ TSTG 45 TSF30U45C 45 30 15 250 10000 1500 TYP. 0.450 0.415 150 50 4 - 55 to +150 - 55 to +150 MAX. 0.50 0.45 500 100 V V μA mA O UNIT V A A V/μs V Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Isolation voltage from terminal to heatsink t = 1 min Maximum instantaneous revers...