TSF30H120C

TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.7g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode SYMBOL VRRM IF(AV) IFSM dV/dt VAC MIN. Breakdown voltage ( IR =1.0mA, Ta =25°C ) IF = 5A IF = 7.5A Instantaneous forward voltage per diode ( Note1 ) IF = 15A IF = 5A IF = 7.5A IF = 15A Instantaneous reverse current per diode at rated reverse voltage Typical thermal resistance per diode Operating junction temperature range Storage temperature range Note 1: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle TJ = 25°C TJ = 125°C IR RθjC TJ TSTG TJ = 125°C VF TJ = 25°C VF VBR 120 TSF30H120C 120 30 15 150 10000 1500 TYP. 0.65 0.70 0.81 0.53 0.58 0.67 4.5 - 55 to +150 -...