Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
creat by ART
TSF2080C
Taiwan Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002...
