TSF10U60C

TSF10U60C Taiwan Semiconductor FEATURES - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.7g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode SYMBOL VRRM IF(AV) IFSM dV/dt VAC VBR Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C IR RθjC TJ TSTG Min. 60 VF TSF10U60C 60 10 5 150 10000 2000 TYP. 0.44 0.54 0.39 4 - 55 to +150 - 55 to +150 MAX. 0.48 0.62 0.42 500 100 O UNIT V A A V/μs V V V μA mA C/W O O Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Isolation voltage from terminal to heatsink t = 1 min Breakdown voltage ( IR =1.0mA, Ta =25°C ) Maximum instantaneous forward voltage per diode (Note1) IF = 5A IF = 10A IF = 5A Maximum...