TSC966

TSC966 NPN Silicon Planar High Voltage Transistor TO-92 Pin Definition: SOT-223 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 600V 400V 300mA 0.5V @ IC / IB = 50mA / 5mA Features ● ● High BVceo, BVcbo High current gain Ordering Information Part No. TSC966CT B0 TSC966CT A3 TSC966CW RPG Package TO-92 TO-92 SOT-223 Packing 1Kpcs / Bulk 2Kpcs / Ammo 2.5Kpcs / 13” Reel Structure ● Epitaxial Planar Type Note: “G” denote for Halogen Free Product Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA=25 C o Symbol VCBO VCES VCEO VEBO DC Pulse TO-92 SOT-223 IC Ptot TJ TSTG Limit 600 600 400 7 0.3 1 0.9 1 +150 - 55 to +150 Unit V V V V A W o o Operating Junction Temperature Operating Junction and Storage Temperature Range C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = 50uA IC = 100uA, VBE= 0 IC = 1mA IE = 50uA VCB = 600V VCE = 400V VEB = 7V IC = 5...