NTMFS5830NLT1G

NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C Steady State TA = 70°C TC = 25°C TC = 70°C TC = 25°C TC = 70°C tp = 10 ms IDM TJ, TSTG IS EAS PD ID PD Symbol VDSS VGS ID Value 40 ±20 28 22 3.2 2.0 172 138 125 80 690 −55 to +150 172 361 A °C A mJ W A W Unit V V A http://onsemi.com V(BR)DSS 40 V RDS(ON) MAX 2.3 mW @ 10 V 3.6 mW @ 4.5 V D (5) ID MAX 172 A G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM D 1 Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 85 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) DFN5 (SO−8FL) CASE 488AA STYLE 1 A Y W ZZ S S S G 5830NL AYWZZ D D D TL 260 °C = Assembly Location = Year = Work Week = Lot Traceability Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Condit...