NTMFS4C13N

NTMFS4C13N Power MOSFET Features 30 V, 38 A, Single N−Channel, SO−8 FL Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 9.1 mW @ 10 V 13.8 mW @ 4.5 V D (5−8) ID MAX 38 A Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 21 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Steady State TA = 25°C TA = 80°C TA = 25°C TA = 25°C TA = 80°C TA = 25°C TA = 25°C TA = 80°C TA = 25°C TC = 25°C TC =80°C TC = 25°C TA = 25°C, tp = 10 ms TA = 25°C PD IDM IDmax TJ, TSTG IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 13.0 9.7 2.46 19.1 14.3 5.32 7.2 5.4 0.75 38 29 21.6 106 70 −55 to +150 19 7.0 22 W ...