NSM80100MT1G PNP Transistor with Dual Series Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Fre...
NSM80100MT1G
PNP Transistor with Dual Series Switching Diode
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD Control Board High Speed Switching High Voltage Switching
MAXIMUM RATINGS −
PNP TRANSISTOR
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −80 −80 −4.0 −500 Unit Vdc Vdc Vdc mAdc
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PNP Transistor with Dual Series Switching Diode
6 D1 5 4
D2
Q1
MAXIMUM RATINGS − SWITCHING DIODE
Rating Reverse Voltage Forward Current Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t < 1 sec t = 1 msec Operating and Storage Junction Temperature Range Symbol VR IF IFSM 1.0 20 TJ, Tstg −55 to +150 °C Value 100 200 Unit V mA A
4 6 5 1 2
1
2
3
3
SC−74 CASE 318F
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
ESD RATINGS
Rating Electrostatic Discharge HBM MM Class 3A M4 Value 4000 V ≤ Failure < 8000 V Failure > 400 V 3PN M G
3PN MG G
THERMAL CHARACTERISTICS
Rating Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance from Junction−to−Ambient (Note 1) Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−...