C6012

Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 700 1 700 7 3 15 24 60 3 150 −55 to +150 °C °C Unit V V V A A A W 3.3±0.3 18.6±0.5 (2.0) Solder Dip 5˚ 1 2 3 (2.0) 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Emitter-base voltage (Collector open) Forward voltage * Collector-base cutoff current (Emitter open) Forward current transfer ratio * Collector-emitter saturation voltage * Base-emitter saturation voltage Transition frequency Storage time Fall time * * Symbol VEBO VF ICBO hFE VCE(sat) VBE(sat) fT tstg tf IF = 7.0 A Conditions IE = 750 mA, IC = 0 VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 VCE = 5 V, IC = 7.0 A IC = 7.0 A, IB = 1.7...