2SC1972

2SC1972 Description The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal for mobile radio applications. Features High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz Emitter ballasted construction for reliability and performance. Manufactured incorporating recyclable RoHS compliant materials. Ability to periodically withstand in excess of 20:1 VSWR load when operated at Vcc = 15.2V, Po = 18W, f = 175MHz. Application 10 to 14 watts output power amplifier applications within the VHF band. TO-220 Package Absolute Maximum Ratings (Tc = 25°C unless otherwise specified) Symbol Vcbo Vebo Veco Ic Pc Tj Tstg Rth-a Rth-c Parameter Collector to base voltage Emitter to base voltage Collector to emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Thermal resistance Junction to ambient Junction to case Conditions Ratings 35 4 17 3.5 1.5 25 175 -55 to 175 100 6 Unit V V V A W W °C °C °C/W °C/W Rbe = Ta = 25°C Tc = 25°C Note: Above parameters are guaranteed independently Electrical Characteristics (Tc = 25°C unless otherwise specified) Symbol V(BR)ebo V(BR)cbo V(BR)ceo Icbo Iebo hfe Po Parameter Emitter to base breakdown voltage Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cut-off current Emitter cut-off current DC forward current gain * Output power Collector efficiency Test Conditions Ie = 10mA, Ic = 0 Ic...