2SC1972
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mo...
2SC1972
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.
FEATURES INCLUDE:
Replaces Original 2SC1972 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package
PACKAGE STYLE TO-220AB (COMMON EMITTER)
MAXIMUM RATINGS
IC VCBO PDISS TSTG θJC 3.5 A 35 V 25 W @ TC = 25 °C -55 °C to +175 °C 6.0 °C/W
1 = BASE 2 = EMITTER 3 = COLLECTOR TAB = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO ICBO IEBO hFE ηC POUT IC = 50 mA IC = 10 mA IE = 10 mA
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
17 35 4.0 100 500
UNITS
V V V µA µA --% W
VCES = 25 V VEB = 3.0 V VCE = 10 V VCC = 13.5 V IC = 100 mA PIN = 2.5 W f =175 MHz 10 60 14 50 70 15
180
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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