HY512264LTC

HY512264 128Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. In dependant read and write of upper and lower byte is controlled by 2 separate /CAS inputs. Optional features are access time(50, 60 or 70ns), package type(SOJ, TSOP-II), and power onsumption (Normal or Low power with self refresh). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability. FEATURES Ÿ Extended data out operation Ÿ Read-modify-write Capability Ÿ 2/CAS inputs for upper and lower byte control Ÿ TTL compatible inputs and outputs Ÿ /CAS-before-/RAS, /RAS-only, Hidden and Self refresh capability Ÿ Max. Active power dissipation Speed 50 60 70 Ÿ Refresh cycle Part number HY512264 Refresh 512 Normal 8ms SL-part 128ms Power 605mW 550mW 495mW Ÿ JEDEC standard pinout Ÿ 40-pin Plastic SOJ (400mil) 40/44-pin plastic TSOP-II (400mil) Ÿ Single power supply of 5V ± 10% Ÿ Early Write or output enable controlled write Ÿ Fast access time and cycle time Speed 50 60 70 tRAC 50ns 60ns 70ns tCAC 15ns 17ns 20ns tHPC 20ns 24ns 29ns ORDERING INFORMATION Part Name HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC *SL : Low power with self refresh Refresh 512 512 512 512 512 512 Power Package 40Pin SOJ L-part SL-part 40Pin SO...