Document
R
N N-CHANNEL MOSFET
JCS640
MAIN CHARACTERISTICS
Package
ID VDSS Rdson (@Vgs=10V) Qg
z z z UPS
18.0 A 200 V 0.18Ω 47 nC
APPLICATIONS
z High efficiency switch
mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 48pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product
z z Crss ( 48pF) z z z dv/dt z RoHS
ORDER MESSAGE
Order codes JCS640C-O-C-N-B JCS640F-O-F-N-B Halogen Free NO NO Device Weight 2.15 g(typ) 2.20 g(typ) Marking JCS640C JCS640F Package TO-220C TO-220MF Packaging Tube Tube
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ABSOLUTE RATINGS (Tc=25℃)
JCS640C 200 18 11.4 18* 11.4* JCS640F Value Unit V A A
Parameter - Drain-Source Voltage Drain Current
Symbol VDSS ID T=25℃ T=100℃ IDM
-continuous
( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1) Repetitive Avalanche Current (note 1) ( 3) Peak Diode Recovery dv/dt (note 3)
72
72*
A
VGSS
±30
V
EAS
259
mJ
IAR
18
A
EAR
14
mJ
dv/dt
5.5
V/ns
Power Dissipation
PD TC=25℃ -Derate above 25℃ TJ,TSTG
140
44
W
1.12
0.35
W/℃
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes
-55~+150
℃
TL
300
℃
* *Drain current limited by maximum junction temperature
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Tests conditions Min Typ Max Units Parameter Symbol
ELECTRICAL CHARACTERISTICS
Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VGS(th) VDS = VGS , ID=250μA 2.0 4.0 V BVDSS ID=250μA, VGS=0V 200 V
ΔBVDSS/Δ ID=250μA, referenced to 25℃ TJ VDS=200V,VGS=0V, TC=25 ℃ VDS=160V, IGSSF VDS=0V, TC=125℃
-
0.2
-
V/℃
IDSS
-
-
10 100 100
μA μA nA
VGS =30V
IGSSR
VDS=0V,
VGS =-30V
-
-
-100
nA
RDS(ON)
VGS =10V , ID=9A
-
0.15 0.18
Ω
gfs
VDS = 40V, ID=9A(note 4) -
13.5
-
S
Dynamic Characteristics Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 1330 1760 pF 181 245 48 65 pF pF
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td(on) tr td(off) tf Qg Qgs Qgd VDS =160V , ID=18A VGS =10V (note 4,5) VDD=100V,ID=18A,RG=25Ω (note 4,5) 54 70 ns ns ns ns nC nC nC
ELECTRICAL CHARACTERISTICS
Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge 104 162 327 395 107 145 47 8 22 62 -
- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 18 .