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JCS640C Dataheets PDF



Part Number JCS640C
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS640C DatasheetJCS640C Datasheet (PDF)

R N N-CHANNEL MOSFET JCS640 MAIN CHARACTERISTICS Package ID VDSS Rdson (@Vgs=10V) Qg z z z UPS 18.0 A 200 V 0.18Ω 47 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 48pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z z Crss ( 48pF) z z z dv/dt z RoHS ORDER MESSAGE Order codes JCS640C-O-C-N-B JCS640F-O-F-N-B H.

  JCS640C   JCS640C



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R N N-CHANNEL MOSFET JCS640 MAIN CHARACTERISTICS Package ID VDSS Rdson (@Vgs=10V) Qg z z z UPS 18.0 A 200 V 0.18Ω 47 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 48pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z z Crss ( 48pF) z z z dv/dt z RoHS ORDER MESSAGE Order codes JCS640C-O-C-N-B JCS640F-O-F-N-B Halogen Free NO NO Device Weight 2.15 g(typ) 2.20 g(typ) Marking JCS640C JCS640F Package TO-220C TO-220MF Packaging Tube Tube :201007A 1/10 R JCS640 ABSOLUTE RATINGS (Tc=25℃) JCS640C 200 18 11.4 18* 11.4* JCS640F Value Unit V A A Parameter - Drain-Source Voltage Drain Current Symbol VDSS ID T=25℃ T=100℃ IDM -continuous ( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1) Repetitive Avalanche Current (note 1) ( 3) Peak Diode Recovery dv/dt (note 3) 72 72* A VGSS ±30 V EAS 259 mJ IAR 18 A EAR 14 mJ dv/dt 5.5 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ TJ,TSTG 140 44 W 1.12 0.35 W/℃ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55~+150 ℃ TL 300 ℃ * *Drain current limited by maximum junction temperature :201007A 2/10 R JCS640 Tests conditions Min Typ Max Units Parameter Symbol ELECTRICAL CHARACTERISTICS Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VGS(th) VDS = VGS , ID=250μA 2.0 4.0 V BVDSS ID=250μA, VGS=0V 200 V ΔBVDSS/Δ ID=250μA, referenced to 25℃ TJ VDS=200V,VGS=0V, TC=25 ℃ VDS=160V, IGSSF VDS=0V, TC=125℃ - 0.2 - V/℃ IDSS - - 10 100 100 μA μA nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=9A - 0.15 0.18 Ω gfs VDS = 40V, ID=9A(note 4) - 13.5 - S Dynamic Characteristics Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 1330 1760 pF 181 245 48 65 pF pF :201007A 3/10 R JCS640 td(on) tr td(off) tf Qg Qgs Qgd VDS =160V , ID=18A VGS =10V (note 4,5) VDD=100V,ID=18A,RG=25Ω (note 4,5) 54 70 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge 104 162 327 395 107 145 47 8 22 62 - - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 18 .


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