APM2509N

APM2509N N-Channel Enhancement Mode MOSFET Features 25V/60A , RDS(ON)=8mΩ(typ.) @ VGS=10V RDS(ON)=11mΩ(typ.) @ VGS=4.5V Super High Dense Advanced Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package Pin Description 1 2 3 G D S Top View of TO-252 D Applications Power Management in Desktop Computer or DC/DC Converters. G S Ordering and Marking Information APM 2509N L e a d F re e C o d e H a n d lin g C o d e Tem p. Range Package Code N-Channel MOSFET Package Code U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & R eel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e AP M 2509N U : AP M 2509N XXXXX XXXXX - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Parameter Drain-Source Voltage Gate-Source Voltage (TA = 25°C unless otherwise noted) Rating 25 ±20 60 110 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.4 - Feb., 2004 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t ≤ 10 sec. APM2509N Absolute Maximum Ratings (Cont.) Symbol PD TJ,TSTG * RθJA (TA = 25°C unless otherwise noted) Rating TC=25°C 50 W 20 -55 to 150 50...