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D6849
2SD6849
Description
INCHANGE Semiconductor isc Product Specification isc Silicon
NPN
Power
Transistor
2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-...
Inchange Semiconductor
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