SVF2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode p...
SVF2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-cell
TM
structure DMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No. SVF2N60M SVF2N60F SVF2N60T SVF2N60D SVF2N60DTR Package Type TO-251-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVF2N60M SVF2N60F SVF2N60T SVF2N60D SVF2N60D Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21 Page 1 of 10
SVF2N60M/F/T/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 34 0.27 Rating SVF2N60M/D SVF2N60T 600 ±30 2.0 8 44 0...