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TM2314FN Dataheets PDF



Part Number TM2314FN
Manufacturers TECH MOS
Logo TECH MOS
Description N-Channel High Density Trench MOSFET
Datasheet TM2314FN DatasheetTM2314FN Datasheet (PDF)

TECH MOS Technology. N-Channel High Density Trench MOSFET TM2314FN PRODUCT SUMMARY VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS = 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. D SOT-23-3L D S G S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power .

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TECH MOS Technology. N-Channel High Density Trench MOSFET TM2314FN PRODUCT SUMMARY VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS = 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. D SOT-23-3L D S G S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ± 12 5.4 21.5 1.7 1.25 0.75 - 55 to 150 Unit V V A A A W °C TA=25°C TA=75°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. a RthJA 100 °C/W : DS-TM2314FN-01 Apr. , 2006 1 TM2314FN ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS b Symbol Condition Min Typc Max Unit VGS = 0V , ID = 250uA VDS = 20V , VGS = 0V VGS = 12V , VDS = 0V 20 1 100 V uA nA ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VDS = VGS , ID = 250uA VGS = 4.5V , ID = 5.4A 0.6 0.83 25 34 1.5 30 V Drain-Source On-State Resistance RDS(on) VGS = 2.5V , ID = 4.3A 46 b m-ohm DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD c VGS = 0V , IS = 1.7A 1.2 V DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS VDS = 8V , VGS = 0V COSS f = 1.0MHz CRSS c 512 130 105 pF pF pF SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Note b. Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% . c. Guaranteed by design , not subject to production testing . tD(ON) tr tD(OFF) tf Qg VDD = 10V , ID = 3A VGEN = 4.5V RL = 3.3 ohm RGEN = 6 ohm 9.8 3.8 21 5.2 5.7 ns ns ns ns nC nC nC VDS = 10V , ID = 3A Qgs VGS = 4.5V Qgd 1.3 1.6 : : DS-TM2314FN-01 Apr. , 2006 2 TM2314FN 25 VGS=4~10V 20 ID , Drain Current (A) ID , Drain Current (A) 6 20 15 VGS=3V 10 5 VGS=2V 0 0 1 2 3 4 5 16 12 8 4 0 0 0.5 1 1.5 2.0 2.5 3.0 VDS , Drain-to-Source Voltage (V) Figure 1. Output Characteristics VGS , Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics BVDSS , Normalized Gate-Source Breakdown Voltage ID= 250uA 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 RDS(on) , Normalized On-Resistance 1.1 2 1.75 1.5 1.25 1 0.75 0.5 0.25 -50 VGS= 4.5V ID= 5.4A -25 0 25 50 75 100 125 -25 0 25 50 75 100 125 Tj , Junction Temperature (°C) Figure 3. Breakdown Voltage Variation with Temperature Tj , Junction Temperature (°C) Figure 4. On-Resistance Variation with Temperature 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 10 VGS , Gate to Source Voltage (V) ID= 250uA Vth , Normalized Gate-Source Threshold Voltage VDS= 10V ID= 3A 8 6 4 2 0 0 2 4 6 8 10 12 Tj , Junction Temperature (°C) Figure 5. Gate Threshold Variation with Temperature DS-TM2314FN-01 Apr. , 2006 Qg , Total Gate Charge (nC) Figure 6. Gate Charge 3 TM2314FN 40 20 10 N) (O DS 20.00 it m Li IS , Source-Drain Current (A) 50 ID , Drain Current (A) R 10.00 0.001S 1 0.01S 0.1S 0.1 VGS=4.5V Single Pulse TA=25 C DC 0.04 0.1 1 10 20 1.00 0.70 0.80 0.89 0.97 1.04 1.11 VDS , Drain-Source Voltage (V) Figure 7. Maximum Safe Operating Area VSD , Body Diode Forward Voltage (V) Figure 8. Body Diode Forward Voltage Variation with Source Current VDD RL D Vin RGEN G S Vout VDS 90% VGS 10% VGS td(on) t r t d(off) t f Figure 9. Switching Test Circuit and Switching Waveforms r(t) , Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 PDM t1 t2 1. RthJA (t)=r (t) * RthJA 2. RthJA=See Datasheet 3. TJM - TA = PDM * RthJA (t) 4. Duty Cycle, D = t1/t2 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 30 Square Wave Pulse Duration (sec) Figure 10. Normalized Thermal Transient Impedance Curve DS-TM2314FN-01 Apr. , 2006 4 .


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