Document
TECH MOS Technology. N-Channel High Density Trench MOSFET
TM2314FN
PRODUCT SUMMARY
VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS = 4.5V
FEATURES
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package.
D
SOT-23-3L
D S G S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation
a a a
Symbol
VDS VGS ID IDM IS PD TJ,TSTG
Limit
20 ± 12 5.4 21.5 1.7 1.25 0.75 - 55 to 150
Unit
V V A A A W °C
TA=25°C TA=75°C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature.
a
RthJA
100
°C/W
:
DS-TM2314FN-01 Apr. , 2006
1
TM2314FN
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS
b
Symbol
Condition
Min Typc Max Unit
VGS = 0V , ID = 250uA VDS = 20V , VGS = 0V VGS = 12V , VDS = 0V
20 1 100
V uA nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID = 250uA VGS = 4.5V , ID = 5.4A
0.6
0.83 25 34
1.5 30
V
Drain-Source On-State Resistance
RDS(on) VGS = 2.5V , ID = 4.3A 46
b
m-ohm
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage VSD
c
VGS = 0V , IS = 1.7A
1.2
V
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS VDS = 8V , VGS = 0V COSS f = 1.0MHz CRSS
c
512 130 105
pF pF pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Note b. Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% . c. Guaranteed by design , not subject to production testing .
tD(ON) tr tD(OFF) tf Qg
VDD = 10V , ID = 3A VGEN = 4.5V RL = 3.3 ohm RGEN = 6 ohm
9.8 3.8 21 5.2 5.7
ns ns ns ns nC nC nC
VDS = 10V , ID = 3A Qgs VGS = 4.5V Qgd 1.3 1.6
:
:
DS-TM2314FN-01 Apr. , 2006
2
TM2314FN
25 VGS=4~10V 20
ID , Drain Current (A)
ID , Drain Current (A)
6
20 15 VGS=3V 10 5 VGS=2V 0 0 1 2 3 4 5
16 12 8 4 0
0
0.5
1
1.5
2.0
2.5
3.0
VDS , Drain-to-Source Voltage (V) Figure 1. Output Characteristics
VGS , Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
BVDSS , Normalized Gate-Source Breakdown Voltage
ID= 250uA 1.075 1.05 1.025 1 0.975 0.95 0.925 -50
RDS(on) , Normalized On-Resistance
1.1
2 1.75 1.5 1.25 1 0.75 0.5 0.25 -50 VGS= 4.5V ID= 5.4A
-25
0
25
50
75
100
125
-25
0
25
50
75
100
125
Tj , Junction Temperature (°C) Figure 3. Breakdown Voltage Variation with Temperature
Tj , Junction Temperature (°C) Figure 4. On-Resistance Variation with Temperature
1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125
10
VGS , Gate to Source Voltage (V)
ID= 250uA
Vth , Normalized Gate-Source Threshold Voltage
VDS= 10V ID= 3A
8
6
4
2 0
0
2
4
6
8
10
12
Tj , Junction Temperature (°C) Figure 5. Gate Threshold Variation with Temperature DS-TM2314FN-01 Apr. , 2006
Qg , Total Gate Charge (nC) Figure 6. Gate Charge
3
TM2314FN
40 20 10
N) (O DS
20.00
it m Li
IS , Source-Drain Current (A)
50
ID , Drain Current (A)
R
10.00
0.001S
1
0.01S
0.1S
0.1
VGS=4.5V Single Pulse TA=25 C
DC
0.04 0.1
1
10 20
1.00
0.70 0.80
0.89
0.97
1.04
1.11
VDS , Drain-Source Voltage (V) Figure 7. Maximum Safe Operating Area
VSD , Body Diode Forward Voltage (V) Figure 8. Body Diode Forward Voltage Variation with Source Current
VDD RL D Vin RGEN G S Vout
VDS 90%
VGS
10% VGS td(on) t r t d(off) t f
Figure 9. Switching Test Circuit and Switching Waveforms
r(t) , Normalized Effective Transient Thermal Impedance
2
1
Duty Cycle = 0.5
0.2 0.1
0.1
PDM t1 t2 1. RthJA (t)=r (t) * RthJA 2. RthJA=See Datasheet 3. TJM - TA = PDM * RthJA (t) 4. Duty Cycle, D = t1/t2
0.05
0.02 Single Pulse
0.01 10
-4
10
-3
10
-2
10
-1
1
10
30
Square Wave Pulse Duration (sec) Figure 10. Normalized Thermal Transient Impedance Curve DS-TM2314FN-01 Apr. , 2006
4
.