TECH MOS Technology. N-Channel High Density Trench MOSFET
TM2314FN
PRODUCT SUMMARY
VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS = 4.5V
FEATURES
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package.
D
SOT-23-3L
D S G S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Paramet...
