SD1060

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SD1060 RF & MICROWAVE TRANSISTORS VHF - UHF APPLICATIONS Features 400 MHz 28 VOLTS POUT = 5.0 WATTS GP = 4.7 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. These transistors are intended for Class A, B, or C amplifier, oscillator or frequency multiplier circuits and are specifically designed for operation in the VHF-UHF region. ABSOLUTE MAXIMUM RATINGS (Tcase (Tcase = 25 ° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 40 4.0 1.5 11.6 +200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Junction-case Thermal Resistance 15.1 ° C/W MSCXXXX.PDF 01-19-99 SD1060 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25 ° C) Symbol BVCBO BVEBO BVCEO ICEO IC = 100 µ A IE = 1 mA IC = 200 mA VCE = 30 V STATIC Test Conditions Min. 65 4.0 40 --- Value Typ. --------- Max. ------0.1 Unit V V V mA DYNAMIC Symbol POUT GP IMD COB f = 400 MHz f = 400 MHz f = 400 MHz f = 1 MHz Test Conditions Min. PIN = 1.7 W PIN ...