WNM4006

Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.126@ VGS=10V 45 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 D 3 Descriptions The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4006 is Pb-free. 1 G 2 S Pin configuration (Top view) Features z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 W46 * = Device Code = Month (A~Z) W46* Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Device Power Switch Load Switch Charging WNM4006-3/TR Marking Order information Package SOT-23 Shipping 3000/Reel&Tape http://www.twtysemi.com sales@twtysemi.com 1 of 3 Product specification WNM4006 Absolute Maximum ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ TL Tstg 1.7 1.3 0.8 0.5 1.5 1.2 0.7 0.4 8 150 260 -55 to 150 10 S Steady State 45 ±20 1.5 1.2 0.7 0....