Product specification
WNM3003
N-Channel, 30V, 4.0A, Power MOSFET
V(BR)DSS
Rds(on) () 0.033@ 10V 0.033@ 10V 0.043 @ 4...
Product specification
WNM3003
N-Channel, 30V, 4.0A, Power MOSFET
V(BR)DSS
Rds(on) () 0.033@ 10V 0.033@ 10V 0.043 @ 4.5V
SOT-23
30V
Descriptions
The WNM3003 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS
(ON)
D 3
with low gate 1 G 2 S
charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM3003 is Pb-free.
Configuration (Top View)
Features
z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 WT3 * = Device Code = Month (A~Z) Marking
WT3*
Applications
z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging Device
Order Information
Package SOT-23 Shipping 3000/Tape&Reel
WNM3003-3/TR
http://www.twtysemi.com
sales@twtysemi.com
1 of 3
Product specification
Absolute Maximum ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ TL Tstg
4.0 3.2 0.8 0.5 3.7 2.9 0.7 0.4 10 150 260 -55 to 150
WNM3003
10 S Steady State
30 ±20 3.7 3.0 0.7 0.4 3.4 2.7 0.6 0.3
Unit V A W A W A °...
