Product specification
WNM2025
Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23-3L
Descriptions
The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
(ON)
D 3
technology and design to provide excellent RDS
with low gate charge. This device is suitable...
