Product specification
WNM2016
N-Channel, 20V, 3.2A, Power MOSFET
V(BR)DSS
Rds(on) 40 @ 4.5V
20
47 @ 2.5V 55 @ 1.8V SOT-23
Descriptions
The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
(ON)
D 3
with low gate 1 G 2 S
charge. This device is suitable for use in DC-DC co...
