WNM2021

WNM2021 WNM2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V ID (A) 0.55 0.45 0.35 SOT-323 Http//:www.willsemi.com Descriptions The WNM2021 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNM2021 is Pb-free. 1 G 2 S Pin configuration (Top view) Features z z z z z Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-323 * 1 3 21* 2 21 = Device Code = Month (A~Z) Marking Applications Device Order information Package SOT-323 Shipping 3000/Reel&Tape z z z z z DC-DC converter circuit Small Signal Switch Load Switch Level Shift WNM2021-3/TR Will Semiconductor Ltd. 1 Dec, 2010 - Rev.1.0 WNM2021 Absolute Maximum ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ TL Tstg 0.89 0.71 0.37 0.23 0.78 0.62 0.29 0.18 1.4 150 260 -55 to 150 10 S Steady State 20 ±6 0.82 0.65 0.31 0.20 0.70 0.56 0.23 0.14 Unit V A W A W A °C °C °C...