512K-Bit CMOS PARALLEL EEPROM
CAT28C512/513
512K-Bit CMOS PARALLEL EEPROM
FEATURES
s Fast Read Access Times: 120/150 ns s Low Power CMOS Dissipation:...
Description
CAT28C512/513
512K-Bit CMOS PARALLEL EEPROM
FEATURES
s Fast Read Access Times: 120/150 ns s Low Power CMOS Dissipation: s Automatic Page Write Operation:
–Active: 50 mA Max. –Standby: 200 µA Max.
s Simple Write Operation:
–1 to 128 Bytes in 5ms –Page Load Timer
s End of Write Detection:
–On-Chip Address and Data Latches –Self-Timed Write Cycle with Auto-Clear
s Fast Write Cycle Time:
–Toggle Bit –DATA Polling
s Hardware and Software Write Protection s 100,000 Program/Erase Cycles s 100 Year Data Retention s Commercial, Industrial and Automotive
–5ms Max
s CMOS and TTL Compatible I/O
Temperature Ranges
DESCRIPTION
The CAT28C512/513 is a fast,low power, 5V-only CMOS parallel EEPROM organized as 64K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional timing and protection hardware. DATA Polling and Toggle status bits signal the start and end of the self-timed write cycle. Additionally, the CAT28C512/513 features hardware and software write protection. The CAT28C512/513 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 100 years. The device is available in JEDEC approved 32-pin DIP, PLCC and TSOP packages.
BLOCK DIAGRAM
ADDR. BUFFER & LATCHES INADVERTENT WRITE PROTECTION ROW DECODER 65,536 x 8 EEPROM ARRAY 128 BYTE PAGE R...
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