FTB1412

SEMICONDUCTOR TECHNICAL DATA FTB1412 FTB1412 FEATURES TRANSISTOR (PNP) A C I J D Power Amplifier Applications DIM A B C D E F H I J L O Q MILLIMETERS 6 50 ± 0 2 5 60 ± 0 2 5 20 ± 0 2 1 50 ± 0 2 2 70 ± 0 2 2 30 ± 0 1 1 00 MAX 2 30 ± 0 2 05± 01 0 50 ± 0 10 16± 02 0 95 MAX E MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -20 -6 -5 1 150 -55-150 Unit V V V A W ℃ ℃ Q B H F 1 2 F 3 L 1 BASE 2 COLLECTOR 3 EMITTER DPAK ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions Min -30 -20 -6 -0.5 -0.5 82 390 -1 120 60 V MHz pF Typ Max Unit V V V µA µA IC=-50µA,IE=0 IC=-1mA,IB=0 IE=-50µA,IC=0 VCB=-20V,IE=0 VEB=-5V,IC=0 VCE=-2V,IC=-500mA IC=-4A,IB=-100mA VCE=-6V,IC=-50mA,f=30MHz VCB=-20V,IE=0,f=1MHz CLASSIFICATION OF Rank Range hFE P 82-180 Q 120-270 R 180-390 2011. 12. 26 Revision No : 0 O 1/2 FTB1412 5k 2k DC CURRENT GAIN : hFE TA=25°C DC CURRENT GAIN : hFE 5k 2k 1k 500 200 100 50 20 10 5 VCE= − 2V ...