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2SD837

Part Number	2SD837
Manufacturer	INCHANGE
Description	Silicon NPN Darlington Power Transistor
Published	Jun 25, 2014
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·High Switching...
Datasheet	2SD837 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min.
)@IC= 3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD837 isc website：www.
iscsemi.
com 1 isc...

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