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PMPB33XP Dataheets PDF



Part Number PMPB33XP
Manufacturers NXP
Logo NXP
Description single P-channel Trench MOSFET
Datasheet PMPB33XP DatasheetPMPB33XP Datasheet (PDF)

PMPB33XP 5 September 2012 20 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated .

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PMPB33XP 5 September 2012 20 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -5.5 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -12 - Typ - Max -20 12 -7.9 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 30 37 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors PMPB33XP 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description D D G S D D D S drain drain gate source drain drain drain source Simplified outline 1 2 3 7 6 5 4 G S Graphic symbol D 8 Transparent top view 017aaa257 DFN2020MD-6 (SOT1220) 3. Ordering information Table 3. Ordering information Package Name PMPB33XP Description Version SOT1220 DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals Type number 4. Marking Table 4. Marking codes Marking code 1S Type number PMPB33XP 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; Tamb = 100 °C IDM Ptot PMPB33XP Conditions Tj = 25 °C Min -12 [1] [1] [1] Max -20 12 -7.9 -5.5 -3.5 -22 1.7 Unit V V A A A A W 2 / 14 - peak drain current total power dissipation Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C All information provided in this document is subject to legal disclaimers. [1] - © NXP B.V. 2012. All rights reserved Product data sheet 5 September 2012 NXP Semiconductors PMPB33XP 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions Tamb = 25 °C; t ≤ 5 s Tsp = 25 °C [1] Min -55 -55 -65 Max 3.5 12.5 150 150 150 Unit W W °C °C °C Tj Tamb Tstg IS junction temperature ambient temperature storage temperature Source-drain diode source current [1] Tamb = 25 °C 2 [1] - -1.9 A Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 120 Pder (%) 80 017aaa123 120 Ider (%) 80 017aaa124 40 40 0 - 75 - 25 25 75 125 Tj (°C) 175 0 - 75 - 25 25 75 125 Tj (°C) 175 Fig. 1. Normalized total power dissipation as a function of junction temperature Fig. 2. Normalized continuous drain current as a function of junction temperature PMPB33XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 5 September 2012 3 / 14 NXP Semiconductors PMPB33XP 20 V, single P-channel Trench MOSFET -102 ID (A) -10 Limit RDSon = VDS/ID tp = 100 µs tp = 1 ms -1 DC; Tsp = 25 °C -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 tp = 100 ms tp = 10 ms 017aaa783 -10-2 -10-2 -10-1 -1 -10 VDS (V) -102 IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point [1] [2] Conditions in free air in free air; t ≤ 5 s [1] [2] [2] Min - Typ 235 67 33 5 Max 270 74 36 10 Unit K/W K/W K/W K/W Rth(j-sp) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 PMPB33XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 5 September 2012 4 / 14 NXP Semiconductors PMPB33XP 20 V, single P-channel Trench MOSFET 103 Zth(j-a) (K/W) 102 017aaa542 duty cycle = 1 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.01 0.02 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 Zth(j-a) (K/W) 102 01.


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