Document
PMPB33XP
5 September 2012
20 V, single P-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -5.5 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -12 -
Typ -
Max -20 12 -7.9
Unit V V A
Static characteristics drain-source on-state resistance
[1]
2
-
30
37
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
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NXP Semiconductors
PMPB33XP
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description D D G S D D D S drain drain gate source drain drain drain source Simplified outline
1 2 3 7 6 5 4
G S
Graphic symbol
D
8
Transparent top view
017aaa257
DFN2020MD-6 (SOT1220)
3. Ordering information
Table 3. Ordering information Package Name PMPB33XP Description Version SOT1220 DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals Type number
4. Marking
Table 4. Marking codes Marking code 1S Type number PMPB33XP
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; Tamb = 100 °C IDM Ptot
PMPB33XP
Conditions Tj = 25 °C
Min -12
[1] [1] [1]
Max -20 12 -7.9 -5.5 -3.5 -22 1.7
Unit V V A A A A W
2 / 14
-
peak drain current total power dissipation
Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C
All information provided in this document is subject to legal disclaimers.
[1]
-
© NXP B.V. 2012. All rights reserved
Product data sheet
5 September 2012
NXP Semiconductors
PMPB33XP
20 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions Tamb = 25 °C; t ≤ 5 s Tsp = 25 °C
[1]
Min -55 -55 -65
Max 3.5 12.5 150 150 150
Unit W W °C °C °C
Tj Tamb Tstg IS
junction temperature ambient temperature storage temperature
Source-drain diode source current
[1]
Tamb = 25 °C
2
[1]
-
-1.9
A
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
120 Pder (%) 80
017aaa123
120 Ider (%) 80
017aaa124
40
40
0 - 75
- 25
25
75
125
Tj (°C)
175
0 - 75
- 25
25
75
125
Tj (°C)
175
Fig. 1.
Normalized total power dissipation as a function of junction temperature
Fig. 2.
Normalized continuous drain current as a function of junction temperature
PMPB33XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
5 September 2012
3 / 14
NXP Semiconductors
PMPB33XP
20 V, single P-channel Trench MOSFET
-102 ID (A) -10 Limit RDSon = VDS/ID tp = 100 µs tp = 1 ms -1 DC; Tsp = 25 °C -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 tp = 100 ms tp = 10 ms
017aaa783
-10-2 -10-2
-10-1
-1
-10
VDS (V)
-102
IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point
[1] [2]
Conditions in free air in free air; t ≤ 5 s
[1] [2] [2]
Min -
Typ 235 67 33 5
Max 270 74 36 10
Unit K/W K/W K/W K/W
Rth(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
2
PMPB33XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
5 September 2012
4 / 14
NXP Semiconductors
PMPB33XP
20 V, single P-channel Trench MOSFET
103 Zth(j-a) (K/W) 102
017aaa542
duty cycle = 1 0.75 0.33 0.2 0.5 0.25 0.1
10
0.05 0.01
0.02 0
1 10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 Zth(j-a) (K/W) 102
01.