VDD8616A8A

V-Data Revision History Revision 1 ( Dec. 2001 ) 1.Fister release. VDD8616A8A Revision 2 ( Apr. 2002 ) 1. Changed module current specification. 2. Add Performance range. 3. Changed AC Characteristics. 4. Changed typo size on module PCB in package dimensions. Rev 2 April, 2002 1 V-Data Double Data Rate SDRAM General Description The VDD8616A8A are four-bank Double Data Rate(DDR) Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Data outputs occur at both rising edges of CK and /CK. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications VDD8616A8A 4M x 16 Bit x 4 Banks Features 2.5V for VDDQ power supply SSTL_2 interface MRS Cycle with address key programs -CAS Latency (2, 2.5) -Burst Length (2,4 &8) -Burst Type (sequential & Interleave) 4 banks operation Differential clock input (CK, /CK) operation Double data rate interface Auto & Self refresh 8192 refresh cycle DQM for masking Package:66-pins 400 mil TSOP-Type II Ordering Information. Part No. VDD8608A8A-75BA VDD8616A8A-75B Frequency 133Mhz(7.5ns /CL=2) 133Mhz(7.5ns /CL=2.5) Interface SSTL_2 Package 400mil 66pin TSOPII Pin Assignment VD D D Q0 VDD Q NC DQ1 VSSQ NC DQ2 VDD Q NC DQ3 VSSQ NC NC V DDQ NC NC VD D NC NC WE CAS R...