RSS065N06

RSS065N06 Transistors 4V Drive Nch MOSFET RSS065N06 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) SOP8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). zApplication Switching zPackaging specifications Package Type RSS065N06 Code Basic ordering unit (pieces) Taping TB 2500 ∗2 ∗1 Each lead has same dimensions zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) (1) (2) (3) (4) (1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zAbsolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS 60 20 VGSS ±6.5 ID ±26 IDP ∗1 1.6 IS 26 ISP ∗1 2.0 PD ∗2 Tch 150 Tstg −55 to +150 Unit V V A A A A W °C °C Total power dissipatino Channel temperature Range of storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-A) ∗ Limits 62.5 Unit °C / W 1/4 RSS065N06 Transistors zElectrical characteristics (Ta = 25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)...