RFN10TF6S

RFN10TF6S Data Sheet Super Fast Recovery Diode RFN10TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity RFN10 TF6S ձ ղ zConstruction Silicon epitaxial planer type ᖺ᭶ ROHM : TO220NFM ձ ղ Manufacture Year Manufacture Week zAbsolue Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions IF=10A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR Junction to case Min. Typ. 1.25 0.05 30 Max. 1.55 10 50 3.5 Unit V μA ns °C/W Symbol VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave , Resistive load Tc=82°C Limits 600 600 10 100 150 55 to 150 Unit V V A A °C °C 60Hz half sin wave , Non-repetitive at Tj=25°C WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 2012.06 - Rev.A RFN10TF6S 　 Data Sheet 100 100000 Tj=150°C 10000 Tj=125°C 10 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1000 Tj=150°C Tj=125°C Tj=75°C Tj=25°C 0.1 0 500 1000 1500 2000 2500 3000 Tj=75°C 100 Tj=25°C 10 1 1 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1400 IF=10A 1350 ...