AM4410N

Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AM4410N PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 13.5 @ VGS = 10V 30 20 @ VGS = 4.5V ID (A) 13 11 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Limit Units Parameter 30 Drain-Source Voltage VDS V VGS ±20 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a a o TA=25 C TA=70 C o o ID IDM IS ±13 ±11 ±50 2.3 3.1 2.2 -55 to 150 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Case a Maximum Junction-to-Ambient a Symbol t <= 5 sec t <= 5 sec RθJC RθJA Maximum 25 50 Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4410_F Analog Power AM4410N SPECIFICATIONS (TA = 25oC ...